SI3460BDV-T1-GE3 Praghsáil (USD) [239890pcs Stoc]
- 1 pcs$0.15419
- 3,000 pcs$0.14509
- Cuid Uimhir:
- SI3460BDV-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 20V 8A 6-TSOP.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Thyristors - SCRanna, Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Aonair, Thyristors - SCRanna - Modúil, Diodes - Zener - Sraith, Diodes - Zener - Aonair, Diodes - RF and Modúil Tiomána Cumhachta ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI3460BDV-T1-GE3 electronic components. SI3460BDV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3460BDV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3460BDV-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI3460BDV-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 20V 8A 6-TSOP
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
8A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
27 mOhm @ 5.1A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
24nC @ 8V
Vgs (Max) :
±8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
860pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2W (Ta), 3.5W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
6-TSOP
Pacáiste / Cás :
SOT-23-6 Thin, TSOT-23-6
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