Cuid Uimhir :
BSO615NGHUMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET 2N-CH 60V 2.6A 8SOIC
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
2.6A
Rds On (Max) @ Id, Vgs :
150 mOhm @ 2.6A, 4.5V
Vgs (ú) (Max) @ Id :
2V @ 20µA
Muirear Geata (Qg) (Max) @ Vgs :
20nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
380pF @ 25V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
PG-DSO-8