Cuid Uimhir :
SSM6N61NU,LF
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET 2N-CH 20V 4A UDFN
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate, 1.5V Drive
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4A
Rds On (Max) @ Id, Vgs :
33 mOhm @ 4A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
3.6nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
410pF @ 10V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-WDFN Exposed Pad
Pacáiste Gléas Soláthraithe :
6-UDFNB (2x2)