SQJQ900E-T1_GE3 Praghsáil (USD) [74376pcs Stoc]
- 1 pcs$0.52571
- 2,000 pcs$0.44331
- Cuid Uimhir:
- SQJQ900E-T1_GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2 N-CH 40V POWERPAK8X8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Túistéirí - TRIACanna, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - JFETanna, Thyristors - SCRanna, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SQJQ900E-T1_GE3 electronic components. SQJQ900E-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJQ900E-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJQ900E-T1_GE3 Tréithe Táirge
Cuid Uimhir :
SQJQ900E-T1_GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2 N-CH 40V POWERPAK8X8
Sraith :
Automotive, AEC-Q101, TrenchFET®
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Standard
Drain to Voltage Source (Vdss) :
40V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
100A (Tc)
Rds On (Max) @ Id, Vgs :
3.9 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
120nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
5900pF @ 20V
Cumhacht - Max :
75W
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
PowerPAK® 8 x 8 Dual
Pacáiste Gléas Soláthraithe :
PowerPAK® 8 x 8 Dual
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