Cuid Uimhir :
TSM4NB65CH C5G
Monaróir :
Taiwan Semiconductor Corporation
Cur síos :
MOSFET N-CHANNEL 650V 4A TO251
Stádas Cuid :
Not For New Designs
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
3.37 Ohm @ 2A, 10V
Vgs (ú) (Max) @ Id :
4.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
13.46nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
549pF @ 25V
Díscaoileadh Cumhachta (Max) :
70W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-251 (IPAK)
Pacáiste / Cás :
TO-251-3 Short Leads, IPak, TO-251AA