Cuid Uimhir :
SI4505DY-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N/P-CH 30V/8V 8-SOIC
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V, 8V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6A, 3.8A
Rds On (Max) @ Id, Vgs :
18 mOhm @ 7.8A, 10V
Vgs (ú) (Max) @ Id :
1.8V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
20nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO