SPB18P06PGATMA1 Praghsáil (USD) [161296pcs Stoc]
- 1 pcs$0.22931
- Cuid Uimhir:
- SPB18P06PGATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET P-CH 60V 18.7A TO-263.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Diodes - RF, Trasraitheoirí - Bipolar (BJT) - RF, Túistéirí - TRIACanna, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - Cuspóir Speisialta, Diodes - Rectifiers - Eagair and Diodes - Zener - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies SPB18P06PGATMA1 electronic components. SPB18P06PGATMA1 can be shipped within 24 hours after order. If you have any demands for SPB18P06PGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB18P06PGATMA1 Tréithe Táirge
Cuid Uimhir :
SPB18P06PGATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET P-CH 60V 18.7A TO-263
Sraith :
SIPMOS®
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
18.7A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 13.2A, 10V
Vgs (ú) (Max) @ Id :
4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
860pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
81.1W (Ta)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D²PAK (TO-263AB)
Pacáiste / Cás :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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