IRFR9N20DTRPBF Praghsáil (USD) [194329pcs Stoc]
- 1 pcs$0.19033
- 2,000 pcs$0.18272
- Cuid Uimhir:
- IRFR9N20DTRPBF
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 200V 9.4A DPAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - RF, Diodes - Rectifiers - Aonair, Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Modúil Tiomána Cumhachta ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IRFR9N20DTRPBF electronic components. IRFR9N20DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFR9N20DTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR9N20DTRPBF Tréithe Táirge
Cuid Uimhir :
IRFR9N20DTRPBF
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 200V 9.4A DPAK
Sraith :
HEXFET®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
200V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9.4A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 5.6A, 10V
Vgs (ú) (Max) @ Id :
5.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
560pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
86W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D-Pak
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
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