Toshiba Semiconductor and Storage - TK6A60W,S4VX

KEY Part #: K6418089

TK6A60W,S4VX Praghsáil (USD) [51384pcs Stoc]

  • 1 pcs$0.84122
  • 50 pcs$0.83704

Cuid Uimhir:
TK6A60W,S4VX
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
MOSFET N CH 600V 6.2A TO-220SIS.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Zener - Aonair, Thyristors - SCRanna - Modúil, Túistéirí - DIACs, SIDACanna, Modúil Tiomána Cumhachta and Trasraitheoirí - Bipolar (BJT) - RF ...
Buntáiste iomaíoch:
We specialize in Toshiba Semiconductor and Storage TK6A60W,S4VX electronic components. TK6A60W,S4VX can be shipped within 24 hours after order. If you have any demands for TK6A60W,S4VX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK6A60W,S4VX Tréithe Táirge

Cuid Uimhir : TK6A60W,S4VX
Monaróir : Toshiba Semiconductor and Storage
Cur síos : MOSFET N CH 600V 6.2A TO-220SIS
Sraith : DTMOSIV
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 600V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 6.2A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 750 mOhm @ 3.1A, 10V
Vgs (ú) (Max) @ Id : 3.7V @ 310µA
Muirear Geata (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 390pF @ 300V
Gné FET : Super Junction
Díscaoileadh Cumhachta (Max) : 30W (Tc)
Teocht Oibriúcháin : 150°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : TO-220SIS
Pacáiste / Cás : TO-220-3 Full Pack

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