Cuid Uimhir :
TPC8126,LQ(CM
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET P-CH 30V 11A 8SOP
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
11A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 5.5A, 10V
Vgs (ú) (Max) @ Id :
2V @ 500µA
Muirear Geata (Qg) (Max) @ Vgs :
56nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2400pF @ 10V
Díscaoileadh Cumhachta (Max) :
1W (Ta)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-SOP (5.5x6.0)
Pacáiste / Cás :
8-SOIC (0.173", 4.40mm Width)