NDD02N60Z-1G Praghsáil (USD) [1211pcs Stoc]
- 1,800 pcs$0.12098
- Cuid Uimhir:
- NDD02N60Z-1G
- Monaróir:
- ON Semiconductor
- Cur síos mionsonraithe:
- MOSFET N-CH 600V IPAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - Rectifiers - Aonair, Diodes - Zener - Sraith, Transistors - Bipolar (BJT) - Aonair and Túistéirí - DIACs, SIDACanna ...
- Buntáiste iomaíoch:
- We specialize in ON Semiconductor NDD02N60Z-1G electronic components. NDD02N60Z-1G can be shipped within 24 hours after order. If you have any demands for NDD02N60Z-1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NDD02N60Z-1G Tréithe Táirge
Cuid Uimhir :
NDD02N60Z-1G
Monaróir :
ON Semiconductor
Cur síos :
MOSFET N-CH 600V IPAK
Sraith :
-
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
600V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
2.2A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
4.8 Ohm @ 1A, 10V
Vgs (ú) (Max) @ Id :
4.5V @ 50µA
Muirear Geata (Qg) (Max) @ Vgs :
10.1nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
274pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
57W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
I-PAK
Pacáiste / Cás :
TO-251-3 Short Leads, IPak, TO-251AA
An nuacht is déanaí
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