Cuid Uimhir :
IPS65R650CEAKMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 700V 10.1A IPAK
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
700V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
10.1A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 2.1A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 210µA
Muirear Geata (Qg) (Max) @ Vgs :
23nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
440pF @ 100V
Díscaoileadh Cumhachta (Max) :
86W (Tc)
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
PG-TO251-3
Pacáiste / Cás :
TO-251-3 Short Leads, IPak, TO-251AA