[4140pcs Stoc]
- Cuid Uimhir:
- SI7940DP-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2N-CH 12V 7.6A PPAK SO-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers Bridge, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Thyristors - SCRanna - Modúil, Trasraitheoirí - Cuspóir Speisialta, Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - JFETanna and Trasraitheoirí - Bipolar (BJT) - RF ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI7940DP-T1-GE3 electronic components. SI7940DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7940DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7940DP-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI7940DP-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 12V 7.6A PPAK SO-8
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
12V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7.6A
Rds On (Max) @ Id, Vgs :
17 mOhm @ 11.8A, 4.5V
Vgs (ú) (Max) @ Id :
1.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
17nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Cumhacht - Max :
1.4W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
PowerPAK® SO-8 Dual
Pacáiste Gléas Soláthraithe :
PowerPAK® SO-8 Dual
An nuacht is déanaí
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