Monaróir :
Rohm Semiconductor
Cur síos :
4V DRIVE NCHNCH MOSFET
Cineál FET :
2 N-Channel (Dual)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3.5A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 3.5A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
3.3nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
180pF @ 10V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SMD, Flat Lead
Pacáiste Gléas Soláthraithe :
TSMT8