Infineon Technologies - BSP298H6327XUSA1

KEY Part #: K6402078

BSP298H6327XUSA1 Praghsáil (USD) [140209pcs Stoc]

  • 1 pcs$0.26380
  • 1,000 pcs$0.20015

Cuid Uimhir:
BSP298H6327XUSA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 400V 500MA SOT-223.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Aonair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - IGBTanna - Aonair, Túistéirí - TRIACanna, Thyristors - SCRanna and Modúil Tiomána Cumhachta ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP298H6327XUSA1 Tréithe Táirge

Cuid Uimhir : BSP298H6327XUSA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 400V 500MA SOT-223
Sraith : SIPMOS®
Stádas Cuid : Not For New Designs
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 400V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 500mA (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 500mA, 10V
Vgs (ú) (Max) @ Id : 4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 400pF @ 25V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 1.8W (Ta)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PG-SOT223-4
Pacáiste / Cás : TO-261-4, TO-261AA

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