Cuid Uimhir :
ZXMN10A08DN8TC
Monaróir :
Diodes Incorporated
Cur síos :
MOSFET 2N-CH 100V 1.6A 8SOIC
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.6A
Rds On (Max) @ Id, Vgs :
250 mOhm @ 3.2A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA (Min)
Muirear Geata (Qg) (Max) @ Vgs :
7.7nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
405pF @ 50V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SOP