CSD23202W10 Praghsáil (USD) [635334pcs Stoc]
- 1 pcs$0.05822
- 3,000 pcs$0.05260
- Cuid Uimhir:
- CSD23202W10
- Monaróir:
- Texas Instruments
- Cur síos mionsonraithe:
- MOSFET P-CH 12V 2.2A 4DSBGA.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Aonair, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - JFETanna, Trasraitheoirí - IGBTanna - Aonair, Túistéirí - DIACs, SIDACanna, Thyristors - SCRanna - Modúil, Trasraitheoirí - Bipolar (BJT) - RF and Diodes - Rectifiers Bridge ...
- Buntáiste iomaíoch:
- We specialize in Texas Instruments CSD23202W10 electronic components. CSD23202W10 can be shipped within 24 hours after order. If you have any demands for CSD23202W10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD23202W10 Tréithe Táirge
Cuid Uimhir :
CSD23202W10
Monaróir :
Texas Instruments
Cur síos :
MOSFET P-CH 12V 2.2A 4DSBGA
Sraith :
NexFET™
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
12V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
2.2A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
53 mOhm @ 500mA, 4.5V
Vgs (ú) (Max) @ Id :
900mV @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
3.8nC @ 4.5V
Vgs (Max) :
-6V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
512pF @ 6V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1W (Ta)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
4-DSBGA (1x1)
Pacáiste / Cás :
4-UFBGA, DSBGA
An nuacht is déanaí
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