BSP299H6327XUSA1 Praghsáil (USD) [140209pcs Stoc]
- 1 pcs$0.26380
- 1,000 pcs$0.20158
- Cuid Uimhir:
- BSP299H6327XUSA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 500V 0.4A SOT-223.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - DIACs, SIDACanna, Diodes - Rectifiers - Eagair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Rectifiers - Aonair and Trasraitheoirí - Cuspóir Speisialta ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSP299H6327XUSA1 electronic components. BSP299H6327XUSA1 can be shipped within 24 hours after order. If you have any demands for BSP299H6327XUSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP299H6327XUSA1 Tréithe Táirge
Cuid Uimhir :
BSP299H6327XUSA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 500V 0.4A SOT-223
Sraith :
SIPMOS®
Stádas Cuid :
Not For New Designs
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
500V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
400mA (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 400mA, 10V
Vgs (ú) (Max) @ Id :
4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
400pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.8W (Ta)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-SOT223-4
Pacáiste / Cás :
TO-261-4, TO-261AA
An nuacht is déanaí
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