Cuid Uimhir :
PHKD3NQ10T,518
Monaróir :
Nexperia USA Inc.
Cur síos :
MOSFET 2N-CH 100V 3A 8SOIC
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3A
Rds On (Max) @ Id, Vgs :
90 mOhm @ 1.5A, 10V
Vgs (ú) (Max) @ Id :
4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
21nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
633pF @ 20V
Teocht Oibriúcháin :
-65°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO