Toshiba Semiconductor and Storage - TK380A60Y,S4X

KEY Part #: K6397778

TK380A60Y,S4X Praghsáil (USD) [66799pcs Stoc]

  • 1 pcs$0.64387
  • 50 pcs$0.51510
  • 100 pcs$0.45071
  • 500 pcs$0.33064
  • 1,000 pcs$0.26103

Cuid Uimhir:
TK380A60Y,S4X
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
MOSFET N-CH 600V 9.7A TO220SIS.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - DIACs, SIDACanna, Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - IGBTanna - Modúil, Diodes - Rectifiers - Eagair, Thyristors - SCRanna, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe and Trasraitheoirí - Bipolar (BJT) - Sraitheanna ...
Buntáiste iomaíoch:
We specialize in Toshiba Semiconductor and Storage TK380A60Y,S4X electronic components. TK380A60Y,S4X can be shipped within 24 hours after order. If you have any demands for TK380A60Y,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK380A60Y,S4X Tréithe Táirge

Cuid Uimhir : TK380A60Y,S4X
Monaróir : Toshiba Semiconductor and Storage
Cur síos : MOSFET N-CH 600V 9.7A TO220SIS
Sraith : DTMOSV
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 600V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 9.7A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 380 mOhm @ 4.9A, 10V
Vgs (ú) (Max) @ Id : 4V @ 360µA
Muirear Geata (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 590pF @ 300V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 30W
Teocht Oibriúcháin : 150°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : TO-220SIS
Pacáiste / Cás : TO-220-3 Full Pack

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