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  1. Baile
  2. Táirgí
  3. DRAM
  4. DDR3
  5. K4B4G1646D-BYH9

Samsung Semiconductor - K4B4G1646D-BYH9

KEY Part #: K7359695

[20056pcs Stoc]

    Cuid Uimhir:
    K4B4G1646D-BYH9
    Monaróir:
    Samsung Semiconductor
    Cur síos mionsonraithe:
    4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Am luaidhe caighdeánach an déantóra:
    I stoc
    Seilfré:
    Bliain
    Slis Ó:
    Hong Cong
    RoHS:
    Modh íocaíochta:
    Bealach loingsithe:
    Catagóirí Teaghlaigh:
    Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: SLC Nand, LPDDR4, LPDDR4X, LPDDR3, HBM Flarebolt, LPDDR5, DDR4 and GDDR6 ...
    Buntáiste iomaíoch:
    We specialize in Samsung Semiconductor K4B4G1646D-BYH9 electronic components. K4B4G1646D-BYH9 can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BYH9, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646D-BYH9 Tréithe Táirge

    Cuid Uimhir : K4B4G1646D-BYH9
    Monaróir : Samsung Semiconductor
    Cur síos : 4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Sraith : DDR3
    Dlús : 4 Gb
    Org. : 256M x 16
    Luas : 1333 Mbps
    voltage : 1.35 V
    Meán. : 0 ~ 85 °C
    pacáiste : 96FBGA
    Stádas Táirge : Mass Production

    An nuacht is déanaí

    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Speed for the next generation of mobile devices
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Evolving Mobile Solutions: Samsung at MWC 2018
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Autonomous Driving and the Quest for Safety
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
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      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

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