BSC159N10LSFGATMA1 Praghsáil (USD) [85400pcs Stoc]
- 1 pcs$0.45786
- 5,000 pcs$0.40250
- Cuid Uimhir:
- BSC159N10LSFGATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 63A TDSON-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Rectifiers - Eagair, Transistors - Bipolar (BJT) - Aonair, Modúil Tiomána Cumhachta, Túistéirí - TRIACanna, Diodes - RF and Trasraitheoirí - Neamhfheidhmiú Inchláraithe ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSC159N10LSFGATMA1 electronic components. BSC159N10LSFGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC159N10LSFGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC159N10LSFGATMA1 Tréithe Táirge
Cuid Uimhir :
BSC159N10LSFGATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 100V 63A TDSON-8
Sraith :
OptiMOS™
Stádas Cuid :
Not For New Designs
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9.4A (Ta), 63A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
15.9 mOhm @ 50A, 10V
Vgs (ú) (Max) @ Id :
2.4V @ 72µA
Muirear Geata (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2500pF @ 50V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
114W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TDSON-8
Pacáiste / Cás :
8-PowerTDFN
An nuacht is déanaí
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