[886pcs Stoc]
- Cuid Uimhir:
- IPB096N03LGATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 30V 35A TO-263-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Thyristors - SCRanna, Modúil Tiomána Cumhachta, Thyristors - SCRanna - Modúil, Diodes - RF, Diodes - Zener - Aonair, Diodes - Zener - Sraith, Transistors - Bipolar (BJT) - Aonair and Transistors - FETs, MOSFETs - RF ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPB096N03LGATMA1 electronic components. IPB096N03LGATMA1 can be shipped within 24 hours after order. If you have any demands for IPB096N03LGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB096N03LGATMA1 Tréithe Táirge
Cuid Uimhir :
IPB096N03LGATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 30V 35A TO-263-3
Sraith :
OptiMOS™
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
35A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.6 mOhm @ 30A, 10V
Vgs (ú) (Max) @ Id :
2.2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1600pF @ 15V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
42W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D²PAK (TO-263AB)
Pacáiste / Cás :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
An nuacht is déanaí
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