SIR122DP-T1-RE3 Praghsáil (USD) [200792pcs Stoc]
- 1 pcs$0.18421
- Cuid Uimhir:
- SIR122DP-T1-RE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 80V PPAK SO-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Aonair, Diodes - Rectifiers - Eagair, Diodes - Rectifiers Bridge, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Aonair and Diodes - Zener - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIR122DP-T1-RE3 electronic components. SIR122DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIR122DP-T1-RE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIR122DP-T1-RE3 Tréithe Táirge
Cuid Uimhir :
SIR122DP-T1-RE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 80V PPAK SO-8
Sraith :
TrenchFET® Gen IV
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
80V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
16.7A (Ta), 59.6A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
7.4 mOhm @ 10A, 10V
Vgs (ú) (Max) @ Id :
3.8V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
44nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1950pF @ 40V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
5.2W (Ta), 65.7W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® SO-8
Pacáiste / Cás :
PowerPAK® SO-8
An nuacht is déanaí
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