Monaróir :
Infineon Technologies
Cur síos :
MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6.4A, 9.7A
Rds On (Max) @ Id, Vgs :
22.6 mOhm @ 6.4A, 10V
Vgs (ú) (Max) @ Id :
2.25V @ 25µA
Muirear Geata (Qg) (Max) @ Vgs :
6.9nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
580pF @ 15V
Cumhacht - Max :
1.4W, 2W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO