Cuid Uimhir :
SIZ998DT-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2 N-CH 30V 8-POWERPAIR
Cineál FET :
2 N-Channel (Dual), Schottky
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs :
6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V
Vgs (ú) (Max) @ Id :
2.2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
8.1nC @ 4.5V, 19.8nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
930pF @ 15V, 2620pF @ 15V
Cumhacht - Max :
20.2W, 32.9W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerWDFN
Pacáiste Gléas Soláthraithe :
8-PowerPair®