IPT111N20NFDATMA1 Praghsáil (USD) [22406pcs Stoc]
- 1 pcs$1.83937
- 2,000 pcs$1.68749
- Cuid Uimhir:
- IPT111N20NFDATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 200V 96A HSOF-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - TRIACanna, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - IGBTanna - Aonair, Diodes - Rectifiers Bridge, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Sraith ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPT111N20NFDATMA1 electronic components. IPT111N20NFDATMA1 can be shipped within 24 hours after order. If you have any demands for IPT111N20NFDATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT111N20NFDATMA1 Tréithe Táirge
Cuid Uimhir :
IPT111N20NFDATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 200V 96A HSOF-8
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
200V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
96A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
11.1 mOhm @ 96A, 10V
Vgs (ú) (Max) @ Id :
4V @ 267µA
Muirear Geata (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
7000pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
375W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-HSOF-8-1
Pacáiste / Cás :
8-PowerSFN
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