Monaróir :
Infineon Technologies
Cur síos :
MOSFET N/P-CH 20V 3A/2.5A 8-SOIC
Cineál FET :
N and P-Channel
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3A, 2.5A
Rds On (Max) @ Id, Vgs :
125 mOhm @ 1A, 10V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
25nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
300pF @ 15V
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO