Vishay Siliconix - SIHP100N60E-GE3

KEY Part #: K6416581

SIHP100N60E-GE3 Praghsáil (USD) [16942pcs Stoc]

  • 1 pcs$2.43266

Cuid Uimhir:
SIHP100N60E-GE3
Monaróir:
Vishay Siliconix
Cur síos mionsonraithe:
MOSFET E SERIES 600V TO-220AB.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Aonair, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - IGBTanna - Modúil, Transistors - Bipolar (BJT) - Aonair, Thyristors - SCRanna - Modúil, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - RF and Thyristors - SCRanna ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHP100N60E-GE3 Tréithe Táirge

Cuid Uimhir : SIHP100N60E-GE3
Monaróir : Vishay Siliconix
Cur síos : MOSFET E SERIES 600V TO-220AB
Sraith : E
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 600V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 30A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 13A, 10V
Vgs (ú) (Max) @ Id : 5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1851pF @ 100V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 208W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : TO-220AB
Pacáiste / Cás : TO-220-3

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