[4664pcs Stoc]
- Cuid Uimhir:
- PMDPB28UN,115
- Monaróir:
- NXP USA Inc.
- Cur síos mionsonraithe:
- MOSFET 2N-CH 20V 4.6A HUSON6.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Zener - Sraith, Trasraitheoirí - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - Cuspóir Speisialta, Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c and Thyristors - SCRanna ...
- Buntáiste iomaíoch:
- We specialize in NXP USA Inc. PMDPB28UN,115 electronic components. PMDPB28UN,115 can be shipped within 24 hours after order. If you have any demands for PMDPB28UN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB28UN,115 Tréithe Táirge
Cuid Uimhir :
PMDPB28UN,115
Monaróir :
NXP USA Inc.
Cur síos :
MOSFET 2N-CH 20V 4.6A HUSON6
Sraith :
-
Stádas Cuid :
Obsolete
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4.6A
Rds On (Max) @ Id, Vgs :
37 mOhm @ 4.6A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
4.7nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
265pF @ 10V
Cumhacht - Max :
510mW
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-UDFN Exposed Pad
Pacáiste Gléas Soláthraithe :
DFN2020-6
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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