Cuid Uimhir :
TPC8213-H(TE12LQ,M
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET 2N-CH 60V 5A SOP8
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
5A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 2.5A, 10V
Vgs (ú) (Max) @ Id :
2.3V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
11nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
625pF @ 10V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.173", 4.40mm Width)
Pacáiste Gléas Soláthraithe :
8-SOP (5.5x6.0)