Vishay Siliconix - SQ1912AEEH-T1_GE3

KEY Part #: K6525475

SQ1912AEEH-T1_GE3 Praghsáil (USD) [485597pcs Stoc]

  • 1 pcs$0.07617

Cuid Uimhir:
SQ1912AEEH-T1_GE3
Monaróir:
Vishay Siliconix
Cur síos mionsonraithe:
MOSFET 2N-CH 20V POWERPAK SC70-6.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Thyristors - SCRanna, Trasraitheoirí - IGBTanna - Aonair, Diodes - RF, Túistéirí - DIACs, SIDACanna, Transistors - Bipolar (BJT) - Aonair, Thyristors - SCRanna - Modúil and Trasraitheoirí - FETanna, MOSFETanna - Aonair ...
Buntáiste iomaíoch:
We specialize in Vishay Siliconix SQ1912AEEH-T1_GE3 electronic components. SQ1912AEEH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1912AEEH-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ1912AEEH-T1_GE3 Tréithe Táirge

Cuid Uimhir : SQ1912AEEH-T1_GE3
Monaróir : Vishay Siliconix
Cur síos : MOSFET 2N-CH 20V POWERPAK SC70-6
Sraith : Automotive, AEC-Q101, TrenchFET®
Stádas Cuid : Active
Cineál FET : 2 N-Channel (Dual)
Gné FET : Standard
Drain to Voltage Source (Vdss) : 20V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 800mA (Tc)
Rds On (Max) @ Id, Vgs : 280 mOhm @ 1.2A, 4.5V
Vgs (ú) (Max) @ Id : 1.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 1.25nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 27pF @ 10V
Cumhacht - Max : 1.5W
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste / Cás : PowerPAK® SC-70-6 Dual
Pacáiste Gléas Soláthraithe : PowerPAK® SC-70-6 Dual

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