[80pcs Stoc]
- Cuid Uimhir:
- IRF6665TR1PBF
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 4.2A DIRECTFET.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Modúil Tiomána Cumhachta, Túistéirí - TRIACanna, Trasraitheoirí - IGBTanna - Aonair, Diodes - Zener - Aonair, Túistéirí - DIACs, SIDACanna, Diodes - Rectifiers - Eagair, Trasraitheoirí - JFETanna and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IRF6665TR1PBF electronic components. IRF6665TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6665TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6665TR1PBF Tréithe Táirge
Cuid Uimhir :
IRF6665TR1PBF
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 100V 4.2A DIRECTFET
Sraith :
HEXFET®
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4.2A (Ta), 19A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
62 mOhm @ 5A, 10V
Vgs (ú) (Max) @ Id :
5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
530pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.2W (Ta), 42W (Tc)
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
DIRECTFET™ SH
Pacáiste / Cás :
DirectFET™ Isometric SH
An nuacht is déanaí
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