Cuid Uimhir :
TPH6400ENH,L1Q
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N-CH 200V 21A 8-SOP
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
200V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
13A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
64 mOhm @ 6.5A, 10V
Vgs (ú) (Max) @ Id :
4V @ 300µA
Muirear Geata (Qg) (Max) @ Vgs :
11.2nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1100pF @ 100V
Díscaoileadh Cumhachta (Max) :
1.6W (Ta), 57W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-SOP Advance (5x5)
Pacáiste / Cás :
8-PowerVDFN