Toshiba Semiconductor and Storage - TPH6400ENH,L1Q

KEY Part #: K6416895

TPH6400ENH,L1Q Praghsáil (USD) [131756pcs Stoc]

  • 1 pcs$0.28818
  • 5,000 pcs$0.28674

Cuid Uimhir:
TPH6400ENH,L1Q
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
MOSFET N-CH 200V 21A 8-SOP.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - TRIACanna, Diodes - RF, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Rectifiers - Aonair, Transistors - FETs, MOSFETs - RF, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - Bipolar (BJT) - RF and Trasraitheoirí - Cuspóir Speisialta ...
Buntáiste iomaíoch:
We specialize in Toshiba Semiconductor and Storage TPH6400ENH,L1Q electronic components. TPH6400ENH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH6400ENH,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPH6400ENH,L1Q Tréithe Táirge

Cuid Uimhir : TPH6400ENH,L1Q
Monaróir : Toshiba Semiconductor and Storage
Cur síos : MOSFET N-CH 200V 21A 8-SOP
Sraith : U-MOSVIII-H
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 200V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 13A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 64 mOhm @ 6.5A, 10V
Vgs (ú) (Max) @ Id : 4V @ 300µA
Muirear Geata (Qg) (Max) @ Vgs : 11.2nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1100pF @ 100V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 1.6W (Ta), 57W (Tc)
Teocht Oibriúcháin : 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : 8-SOP Advance (5x5)
Pacáiste / Cás : 8-PowerVDFN

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