SIZ322DT-T1-GE3 Praghsáil (USD) [252514pcs Stoc]
- 1 pcs$0.14648
- Cuid Uimhir:
- SIZ322DT-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2 N-CH 25V 30A 8-POWER33.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - FETs, MOSFETs - RF, Thyristors - SCRanna - Modúil, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Rectifiers - Eagair, Túistéirí - TRIACanna, Transistors - Bipolar (BJT) - Aonair and Trasraitheoirí - IGBTanna - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIZ322DT-T1-GE3 electronic components. SIZ322DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ322DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ322DT-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SIZ322DT-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2 N-CH 25V 30A 8-POWER33
Sraith :
TrenchFET® Gen IV
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Standard
Drain to Voltage Source (Vdss) :
25V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
30A (Tc)
Rds On (Max) @ Id, Vgs :
6.35 mOhm @ 15A, 10V
Vgs (ú) (Max) @ Id :
2.4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
20.1nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
950pF @ 12.5V
Cumhacht - Max :
16.7W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerWDFN
Pacáiste Gléas Soláthraithe :
8-Power33 (3x3)
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