Monaróir :
Infineon Technologies
Cur síos :
MOSFET N/P-CH 30V 4A/3A 8SOIC
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4A, 3A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 2.4A, 10V
Vgs (ú) (Max) @ Id :
3V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
25nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
520pF @ 15V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO