Cuid Uimhir :
TPC8223-H,LQ(S
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET 2N-CH 30V 9A 8SOP
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9A
Rds On (Max) @ Id, Vgs :
17 mOhm @ 4.5A, 10V
Vgs (ú) (Max) @ Id :
2.3V @ 100µA
Muirear Geata (Qg) (Max) @ Vgs :
17nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1190pF @ 10V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SOP