BSG0810NDIATMA1 Praghsáil (USD) [83416pcs Stoc]
- 1 pcs$0.46874
- 5,000 pcs$0.46121
- Cuid Uimhir:
- BSG0810NDIATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET 2N-CH 25V 19A/39A 8TISON.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers Bridge, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - JFETanna, Thyristors - SCRanna - Modúil, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c and Transistors - Bipolar (BJT) - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSG0810NDIATMA1 electronic components. BSG0810NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSG0810NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSG0810NDIATMA1 Tréithe Táirge
Cuid Uimhir :
BSG0810NDIATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET 2N-CH 25V 19A/39A 8TISON
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual) Asymmetrical
Gné FET :
Logic Level Gate, 4.5V Drive
Drain to Voltage Source (Vdss) :
25V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
19A, 39A
Rds On (Max) @ Id, Vgs :
3 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1040pF @ 12V
Cumhacht - Max :
2.5W
Teocht Oibriúcháin :
-55°C ~ 155°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerTDFN
Pacáiste Gléas Soláthraithe :
PG-TISON-8
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