Monaróir :
Alpha & Omega Semiconductor Inc.
Cur síos :
MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Cineál FET :
2 N-Channel (Half Bridge)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6.6A, 8.1A
Rds On (Max) @ Id, Vgs :
20 mOhm @ 6.6A, 10V
Vgs (ú) (Max) @ Id :
2.4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
6.5nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
460pF @ 15V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-WDFN Exposed Pad
Pacáiste Gléas Soláthraithe :
8-DFN-EP (3x3)