Cuid Uimhir :
BSM180D12P2C101
Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET 2N-CH 1200V 180A MODULE
Cineál FET :
2 N-Channel (Half Bridge)
Gné FET :
Silicon Carbide (SiC)
Drain to Voltage Source (Vdss) :
1200V (1.2kV)
Reatha - Leanúnach Drain (Id) @ 25 ° C :
204A (Tc)
Rds On (Max) @ Id, Vgs :
-
Vgs (ú) (Max) @ Id :
4V @ 35.2mA
Muirear Geata (Qg) (Max) @ Vgs :
-
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
23000pF @ 10V
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Pacáiste Gléas Soláthraithe :
Module