Cuid Uimhir :
APTSM120AM55CT1AG
Monaróir :
Microsemi Corporation
Cur síos :
POWER MODULE - SIC
Cineál FET :
2 N-Channel (Dual), Schottky
Gné FET :
Silicon Carbide (SiC)
Drain to Voltage Source (Vdss) :
1200V (1.2kV)
Reatha - Leanúnach Drain (Id) @ 25 ° C :
74A (Tc)
Rds On (Max) @ Id, Vgs :
50 mOhm @ 40A, 20V
Vgs (ú) (Max) @ Id :
3V @ 2mA
Muirear Geata (Qg) (Max) @ Vgs :
272nC @ 20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
5120pF @ 1000V
Teocht Oibriúcháin :
-40°C ~ 175°C (TJ)
Cineál Gléasta :
Chassis Mount
Pacáiste Gléas Soláthraithe :
SP1