SI6968BEDQ-T1-E3 Praghsáil (USD) [142562pcs Stoc]
- 1 pcs$0.25945
- 3,000 pcs$0.24363
- Cuid Uimhir:
- SI6968BEDQ-T1-E3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2N-CH 20V 5.2A 8TSSOP.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - FETs, MOSFETs - RF, Modúil Tiomána Cumhachta, Trasraitheoirí - JFETanna, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Rectifiers - Eagair and Diodes - Toilleadh Athrógach (Varicaps, Varactors) ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI6968BEDQ-T1-E3 electronic components. SI6968BEDQ-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI6968BEDQ-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI6968BEDQ-T1-E3 Tréithe Táirge
Cuid Uimhir :
SI6968BEDQ-T1-E3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 20V 5.2A 8TSSOP
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual) Common Drain
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
5.2A
Rds On (Max) @ Id, Vgs :
22 mOhm @ 6.5A, 4.5V
Vgs (ú) (Max) @ Id :
1.6V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
18nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Cumhacht - Max :
1W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-TSSOP (0.173", 4.40mm Width)
Pacáiste Gléas Soláthraithe :
8-TSSOP
An nuacht is déanaí
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