Cuid Uimhir :
APTMC120AM55CT1AG
Monaróir :
Microsemi Corporation
Cur síos :
MOSFET 2N-CH 1200V 55A SP1
Cineál FET :
2 N-Channel (Half Bridge)
Gné FET :
Silicon Carbide (SiC)
Drain to Voltage Source (Vdss) :
1200V (1.2kV)
Reatha - Leanúnach Drain (Id) @ 25 ° C :
55A (Tc)
Rds On (Max) @ Id, Vgs :
49 mOhm @ 40A, 20V
Vgs (ú) (Max) @ Id :
2.2V @ 2mA (Typ)
Muirear Geata (Qg) (Max) @ Vgs :
98nC @ 20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1900pF @ 1000V
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Chassis Mount
Pacáiste Gléas Soláthraithe :
SP1