Infineon Technologies - IPB50R199CPATMA1

KEY Part #: K6418187

IPB50R199CPATMA1 Praghsáil (USD) [54961pcs Stoc]

  • 1 pcs$0.71142
  • 1,000 pcs$0.67987

Cuid Uimhir:
IPB50R199CPATMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 550V 17A TO-263.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Toilleadh Athrógach (Varicaps, Varactors), Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair, Diodes - Zener - Sraith, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Rectifiers Bridge, Túistéirí - TRIACanna and Thyristors - SCRanna ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB50R199CPATMA1 Tréithe Táirge

Cuid Uimhir : IPB50R199CPATMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 550V 17A TO-263
Sraith : CoolMOS™
Stádas Cuid : Not For New Designs
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 550V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 17A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 199 mOhm @ 9.9A, 10V
Vgs (ú) (Max) @ Id : 3.5V @ 660µA
Muirear Geata (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1800pF @ 100V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 139W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PG-TO263-3-2
Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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