Cuid Uimhir :
SQ4961EY-T1_GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET DUAL P-CHAN 60V SO8
Sraith :
Automotive, AEC-Q101, TrenchFET®
Cineál FET :
2 P-Channel (Dual)
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4.4A (Tc)
Rds On (Max) @ Id, Vgs :
85 mOhm @ 3.5A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
40nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1140pF @ 25V
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO