Vishay Siliconix - SQ4961EY-T1_GE3

KEY Part #: K6525185

SQ4961EY-T1_GE3 Praghsáil (USD) [118801pcs Stoc]

  • 1 pcs$0.31134
  • 2,500 pcs$0.26312

Cuid Uimhir:
SQ4961EY-T1_GE3
Monaróir:
Vishay Siliconix
Cur síos mionsonraithe:
MOSFET DUAL P-CHAN 60V SO8.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Modúil Tiomána Cumhachta, Diodes - Zener - Aonair, Diodes - Rectifiers - Aonair, Túistéirí - TRIACanna, Trasraitheoirí - JFETanna, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Transistors - Bipolar (BJT) - Aonair ...
Buntáiste iomaíoch:
We specialize in Vishay Siliconix SQ4961EY-T1_GE3 electronic components. SQ4961EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4961EY-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ4961EY-T1_GE3 Tréithe Táirge

Cuid Uimhir : SQ4961EY-T1_GE3
Monaróir : Vishay Siliconix
Cur síos : MOSFET DUAL P-CHAN 60V SO8
Sraith : Automotive, AEC-Q101, TrenchFET®
Stádas Cuid : Active
Cineál FET : 2 P-Channel (Dual)
Gné FET : Standard
Drain to Voltage Source (Vdss) : 60V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 4.4A (Tc)
Rds On (Max) @ Id, Vgs : 85 mOhm @ 3.5A, 10V
Vgs (ú) (Max) @ Id : 2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 40nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1140pF @ 25V
Cumhacht - Max : 3.3W
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste / Cás : 8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe : 8-SO

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