Cuid Uimhir :
SI4816DY-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 30V 5.3A 8-SOIC
Cineál FET :
2 N-Channel (Half Bridge)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
5.3A, 7.7A
Rds On (Max) @ Id, Vgs :
22 mOhm @ 6.3A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
12nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Cumhacht - Max :
1W, 1.25W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO