Cuid Uimhir :
TPC8207(TE12L,Q)
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET 2N-CH 20V 6A 8-SOP
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6A
Rds On (Max) @ Id, Vgs :
20 mOhm @ 4.8A, 4V
Vgs (ú) (Max) @ Id :
1.2V @ 200µA
Muirear Geata (Qg) (Max) @ Vgs :
22nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2010pF @ 10V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.173", 4.40mm Width)
Pacáiste Gléas Soláthraithe :
8-SOP (5.5x6.0)