Cuid Uimhir :
BSM180C12P2E202
Monaróir :
Rohm Semiconductor
Cur síos :
BSM180C12P2E202 IS A SIC SILICO
Teicneolaíocht :
SiC (Silicon Carbide Junction Transistor)
Drain to Voltage Source (Vdss) :
1200V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
204A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (ú) (Max) @ Id :
4V @ 35.2mA
Muirear Geata (Qg) (Max) @ Vgs :
-
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
20000pF @ 10V
Díscaoileadh Cumhachta (Max) :
1360W (Tc)
Teocht Oibriúcháin :
175°C (TJ)
Cineál Gléasta :
Chassis Mount
Pacáiste Gléas Soláthraithe :
Module