Cuid Uimhir :
SQJ912AEP-T1_GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 40V 30A PPAK SO-8
Sraith :
Automotive, AEC-Q101, TrenchFET®
Cineál FET :
2 N-Channel (Dual)
Drain to Voltage Source (Vdss) :
40V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
30A
Rds On (Max) @ Id, Vgs :
9.3 mOhm @ 9.7A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
38nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1835pF @ 20V
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
PowerPAK® SO-8 Dual
Pacáiste Gléas Soláthraithe :
PowerPAK® SO-8 Dual