Monaróir :
Infineon Technologies
Cur síos :
MOSFET 2N-CH 20V 8.9A 8-SOIC
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
8.9A
Rds On (Max) @ Id, Vgs :
18.3 mOhm @ 8.9A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
7.4nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
540pF @ 10V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO